• Editors' Suggestion

Multiple Magnetic Topological Phases in Bulk van der Waals Crystal MnSb4Te7

Shuchun Huan, Shihao Zhang, Zhicheng Jiang, Hao Su, Hongyuan Wang, Xin Zhang, Yichen Yang, Zhengtai Liu, Xia Wang, Na Yu, Zhiqiang Zou, Dawei Shen, Jianpeng Liu, and Yanfeng Guo
Phys. Rev. Lett. 126, 246601 – Published 16 June 2021
PDFHTMLExport Citation

Abstract

The magnetic van der Waals crystals MnBi2Te4/(Bi2Te3)n have drawn significant attention due to their rich topological properties and the tunability by external magnetic field. Although the MnBi2Te4/(Bi2Te3)n family have been intensively studied in the past few years, their close relatives, the MnSb2Te4/(Sb2Te3)n family, remain much less explored. In this work, combining magnetotransport measurements, angle-resolved photoemission spectroscopy, and first principles calculations, we find that MnSb4Te7, the n=1 member of the MnSb2Te4/(Sb2Te3)n family, is a magnetic topological system with versatile topological phases that can be manipulated by both carrier doping and magnetic field. Our calculations unveil that its A-type antiferromagnetic (AFM) ground state stays in a Z2 AFM topological insulator phase, which can be converted to an inversion-symmetry-protected axion insulator phase when in the ferromagnetic (FM) state. Moreover, when this system in the FM phase is slightly carrier doped on either the electron or hole side, it becomes a Weyl semimetal with multiple Weyl nodes in the highest valence bands and lowest conduction bands, which are manifested by the measured notable anomalous Hall effect. Our work thus introduces a new magnetic topological material with different topological phases that are highly tunable by carrier doping or magnetic field.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 14 February 2021
  • Accepted 27 May 2021

DOI:https://doi.org/10.1103/PhysRevLett.126.246601

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shuchun Huan1,*, Shihao Zhang1,*, Zhicheng Jiang2,*, Hao Su1, Hongyuan Wang1, Xin Zhang1, Yichen Yang2, Zhengtai Liu2, Xia Wang1,4, Na Yu1,4, Zhiqiang Zou1,4, Dawei Shen2,5,†, Jianpeng Liu1,3,‡, and Yanfeng Guo1,§

  • 1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
  • 3ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, China
  • 4Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 5Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

  • *These authors contributed equally to this work.
  • Corresponding author. dwshen@mail.sim.ac.cn
  • Corresponding author. liujp@shanghaitech.edu.cn
  • §Corresponding author. guoyf@shanghaitech.edu.cn

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 126, Iss. 24 — 18 June 2021

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×