Abstract
Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ion’s motion. Such dielectrics are integral components of ion traps. Quantitative agreement is found between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.
- Received 26 March 2021
- Accepted 17 May 2021
DOI:https://doi.org/10.1103/PhysRevLett.126.230505
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.
Published by the American Physical Society