Near-GeV Electron Beams at a Few Per-Mille Level from a Laser Wakefield Accelerator via Density-Tailored Plasma

L. T. Ke, K. Feng, W. T. Wang, Z. Y. Qin, C. H. Yu, Y. Wu, Y. Chen, R. Qi, Z. J. Zhang, Y. Xu, X. J. Yang, Y. X. Leng, J. S. Liu, R. X. Li, and Z. Z. Xu
Phys. Rev. Lett. 126, 214801 – Published 25 May 2021
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Abstract

A simple, efficient scheme was developed to obtain near-gigaelectronvolt electron beams with energy spreads of few per-mille level in a single-stage laser wakefield accelerator. Longitudinal plasma density was tailored to control relativistic laser-beam evolution, resulting in injection, dechirping, and a quasi-phase-stable acceleration. With this scheme, electron beams with peak energies of 780–840 MeV, rms energy spreads of 2.4‰–4.1‰, charges of 8.5–23.6 pC, and rms divergences of 0.1–0.4 mrad were experimentally obtained. Quasi-three-dimensional particle-in-cell simulations agreed well with the experimental results. The dechirping strength was estimated to reach up to 11TeV/mm/m, which is higher than previously obtained results. Such high-quality electron beams will boost the development of compact intense coherent radiation sources and x-ray free-electron lasers.

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  • Received 16 June 2020
  • Revised 18 March 2021
  • Accepted 28 April 2021
  • Corrected 8 July 2021

DOI:https://doi.org/10.1103/PhysRevLett.126.214801

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Plasma PhysicsAccelerators & Beams

Corrections

8 July 2021

Correction: An inline equation appearing in the fourth sentence of the seventh paragraph contained an error and has been fixed.

Authors & Affiliations

L. T. Ke1,2, K. Feng1, W. T. Wang1,*, Z. Y. Qin3,†, C. H. Yu3, Y. Wu1, Y. Chen1, R. Qi1, Z. J. Zhang3, Y. Xu1, X. J. Yang1, Y. X. Leng1,4, J. S. Liu1,3,‡, R. X. Li1,2,4,§, and Z. Z. Xu1,2,4

  • 1State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
  • 3Department of Physics, Shanghai Normal University, Shanghai 200234, People’s Republic of China
  • 4School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, People’s Republic of China

  • *wwt1980@siom.ac.cn
  • phyzyqin@shnu.edu.cn
  • michaeljs_liu@siom.ac.cn
  • §ruxinli@mail.shcnc.ac.cn

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Issue

Vol. 126, Iss. 21 — 28 May 2021

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