Voltage-Controlled Magnetic Reversal in Orbital Chern Insulators

Jihang Zhu, Jung-Jung Su, and A. H. MacDonald
Phys. Rev. Lett. 125, 227702 – Published 24 November 2020
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Abstract

Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect and have so far been identified experimentally in magnetically doped topological insulator thin films and in bilayer graphene moiré superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin polarization combined with spin-orbit interactions, as in the magnetically doped topological insulator case, or directly from spontaneous orbital currents, as in the moiré superlattice case. We argue that, in a given magnetic state, characterized, for example, by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak n and weak p electrostatic or chemical doping. This property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.

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  • Received 3 March 2020
  • Revised 28 August 2020
  • Accepted 21 October 2020

DOI:https://doi.org/10.1103/PhysRevLett.125.227702

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jihang Zhu1, Jung-Jung Su2, and A. H. MacDonald1

  • 1Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
  • 2Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

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Issue

Vol. 125, Iss. 22 — 27 November 2020

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