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Topological Anderson Insulator in Disordered Photonic Crystals

Gui-Geng Liu, Yihao Yang, Xin Ren, Haoran Xue, Xiao Lin, Yuan-Hang Hu, Hong-xiang Sun, Bo Peng, Peiheng Zhou, Yidong Chong, and Baile Zhang
Phys. Rev. Lett. 125, 133603 – Published 24 September 2020
Physics logo See synopsis: Let Disorder Dictate Topology
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Abstract

Recent studies have revealed the counterintuitive possibility that increasing disorder can turn a topologically trivial insulator into a nontrivial insulator, called a topological Anderson insulator (TAI). Here, we propose and experimentally demonstrate a photonic TAI in a two-dimensional disordered gyromagnetic photonic crystal in the microwave regime. We directly observe the disorder-induced topological phase transition from a trivial insulator to a TAI with robust chiral edge states. We also demonstrate topological heterostructures that host edge states at interfaces between domains with different disorder parameters.

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  • Received 12 April 2020
  • Revised 22 July 2020
  • Accepted 17 August 2020

DOI:https://doi.org/10.1103/PhysRevLett.125.133603

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Interdisciplinary Physics

synopsis

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Let Disorder Dictate Topology

Published 24 September 2020

By varying the amount of disorder in a photonic crystal, researchers can control several topological features of the crystal.

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Authors & Affiliations

Gui-Geng Liu1,2, Yihao Yang1,2,*, Xin Ren3, Haoran Xue1, Xiao Lin1, Yuan-Hang Hu3, Hong-xiang Sun4, Bo Peng3, Peiheng Zhou3,†, Yidong Chong1,2,‡, and Baile Zhang1,2,§

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
  • 2Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
  • 3National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 4Research Center of Fluid Machinery Engineering and Technology, School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China

  • *yang.yihao@ntu.edu.sg
  • phzhou@uestc.edu.cn
  • yidong@ntu.edu.sg
  • §blzhang@ntu.edu.sg

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Issue

Vol. 125, Iss. 13 — 25 September 2020

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