Abstract
Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott insulator-metal transition in cuprate films that cover both the electron- and hole-doped regimes. Tunneling conductance measurements directly on the copper-oxide () planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring the atomic-scale electronic response of to substitutional dopants and intrinsic defects in a sister compound . The results may be better explained in the framework of self-modulation doping, similar to that in semiconductor heterostructures, and form a basis for developing any microscopic theories for cuprate superconductivity.
- Received 31 January 2020
- Revised 24 June 2020
- Accepted 16 July 2020
DOI:https://doi.org/10.1103/PhysRevLett.125.077002
© 2020 American Physical Society