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First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS2

Jonas G. Roch, Dmitry Miserev, Guillaume Froehlicher, Nadine Leisgang, Lukas Sponfeldner, Kenji Watanabe, Takashi Taniguchi, Jelena Klinovaja, Daniel Loss, and Richard J. Warburton
Phys. Rev. Lett. 124, 187602 – Published 8 May 2020
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Abstract

Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS2. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.

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  • Received 14 November 2019
  • Accepted 3 April 2020

DOI:https://doi.org/10.1103/PhysRevLett.124.187602

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jonas G. Roch1,*, Dmitry Miserev1, Guillaume Froehlicher1, Nadine Leisgang1, Lukas Sponfeldner1, Kenji Watanabe2, Takashi Taniguchi2, Jelena Klinovaja1, Daniel Loss1, and Richard J. Warburton1

  • 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • 2National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan

  • *jonasgael.roch@unibas.ch

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Vol. 124, Iss. 18 — 8 May 2020

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