Stability of Vicinal Surfaces: Beyond the Quasistatic Approximation

L. Guin, M. E. Jabbour, L. Shaabani-Ardali, L. Benoit-Maréchal, and N. Triantafyllidis
Phys. Rev. Lett. 124, 036101 – Published 22 January 2020
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Abstract

We revisit the step bunching instability without recourse to the quasistatic approximation and show that the stability diagrams are significantly altered, even in the low-deposition regime where it was thought sufficient. In particular, steps are unstable against bunching for attachment-detachment limited growth. By accounting for the dynamics and chemical effects, we can explain the onset of step bunching in Si(111)(7×7) and GaAs(001) without resort to the inverse Schwoebel barrier or step-edge diffusion. Further, the size-scaling analysis of step-bunch growth, as induced by these two combined effects, agrees with the bunching regime observed at 750°C in Si(111)(7×7).

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  • Received 22 November 2018
  • Revised 23 September 2019

DOI:https://doi.org/10.1103/PhysRevLett.124.036101

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

L. Guin1,2, M. E. Jabbour1,3, L. Shaabani-Ardali4,5, L. Benoit-Maréchal1,2, and N. Triantafyllidis1,3,6

  • 1LMS, École polytechnique, CNRS, Institut polytechnique de Paris, Palaiseau 91128, France
  • 2LPICM, École polytechnique, CNRS, Institut polytechnique de Paris, Palaiseau 91128, France
  • 3Département de Mécanique, École polytechnique, Palaiseau 91128, France
  • 4LadHyX, École polytechnique, CNRS, Institut polytechnique de Paris, Palaiseau 91128, France
  • 5DAAA, ONERA, Université Paris-Saclay, Meudon F-92190, France
  • 6Aerospace Engineering Department & Mechanical Engineering Department (emeritus), The University of Michigan, Ann Arbor, Michigan 48109-2140, USA

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Issue

Vol. 124, Iss. 3 — 24 January 2020

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