Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond

Matthew E. Trusheim, Benjamin Pingault, Noel H. Wan, Mustafa Gündoğan, Lorenzo De Santis, Romain Debroux, Dorian Gangloff, Carola Purser, Kevin C. Chen, Michael Walsh, Joshua J. Rose, Jonas N. Becker, Benjamin Lienhard, Eric Bersin, Ioannis Paradeisanos, Gang Wang, Dominika Lyzwa, Alejandro R-P. Montblanch, Girish Malladi, Hassaram Bakhru, Andrea C. Ferrari, Ian A. Walmsley, Mete Atatüre, and Dirk Englund
Phys. Rev. Lett. 124, 023602 – Published 14 January 2020
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Abstract

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T1>10ms, and the coherence time, T2* reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

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  • Received 19 November 2018
  • Revised 15 November 2019

DOI:https://doi.org/10.1103/PhysRevLett.124.023602

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & Optical

Authors & Affiliations

Matthew E. Trusheim1,*, Benjamin Pingault2,*, Noel H. Wan1, Mustafa Gündoğan2,†, Lorenzo De Santis1, Romain Debroux2, Dorian Gangloff2, Carola Purser2, Kevin C. Chen1, Michael Walsh1, Joshua J. Rose2, Jonas N. Becker3, Benjamin Lienhard1, Eric Bersin1, Ioannis Paradeisanos4, Gang Wang4, Dominika Lyzwa1, Alejandro R-P. Montblanch2, Girish Malladi5, Hassaram Bakhru5, Andrea C. Ferrari4, Ian A. Walmsley3, Mete Atatüre2,‡, and Dirk Englund1,§

  • 1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 2Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 3Clarendon Laboratory, University of Oxford, Parks road, Oxford OX1 3PU, United Kingdom
  • 4Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
  • 5College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, New York 12203, USA

  • *These authors equally contributed to this work.
  • Present address: Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
  • ma424@cam.ac.uk
  • §englund@mit.edu

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Issue

Vol. 124, Iss. 2 — 17 January 2020

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