Quantized Field-Effect Tunneling between Topological Edge or Interface States

Yong Xu, Yan-Ru Chen, Jun Wang, Jun-Feng Liu, and Zhongshui Ma
Phys. Rev. Lett. 123, 206801 – Published 12 November 2019
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Abstract

We study the tunneling through a two-dimensional topological insulator with topologically protected edge states. It is shown that the tunneling probability can be quantized in a broad parameter range, 0 or 1, tuned by an applied transverse electric field. Based on this field-effect tunneling, we propose two types of topological transistors based on helical edge or interface states of quantum spin Hall insulators separately. The quantized tunneling conductance is obtained and shown to be robust against nonmagnetic disorders. Usually, the topological transition is necessary in the operation of topological transistors. These findings provide a new strategy for the design of topological transistors without topological transitions.

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  • Received 9 January 2019
  • Revised 8 September 2019

DOI:https://doi.org/10.1103/PhysRevLett.123.206801

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yong Xu1,2, Yan-Ru Chen1,2, Jun Wang3, Jun-Feng Liu1,2,*, and Zhongshui Ma4,5,†

  • 1School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China
  • 2Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
  • 3Department of Physics, Southeast University, Nanjing 210096, China
  • 4School of Physics, Peking University, Beijing 100871, China
  • 5Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

  • *phjfliu@gzhu.edu.cn
  • mazs@pku.edu.cn

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Issue

Vol. 123, Iss. 20 — 15 November 2019

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