Li, An, and Morozov Reply:

Guodong Li, Qi An, and Sergey I. Morozov
Phys. Rev. Lett. 123, 119602 – Published 13 September 2019

Abstract

  • Figure
  • Received 12 August 2019

DOI:https://doi.org/10.1103/PhysRevLett.123.119602

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Guodong Li1,2,*, Qi An3, and Sergey I. Morozov4

  • 1Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, School of Science, Wuhan University of Technology, Wuhan, 430070, China
  • 2State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
  • 3Department of Chemical and Materials Engineering, University of Nevada, Reno, Reno, Nevada, 89557, USA
  • 4Department of Computer Simulation and Nanotechnology, South Ural State University, Chelyabinsk 454080, Russia

  • *Corresponding author. guodonglee@whut.edu.cn

Comments & Replies

Comment on “Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb”

Bo Yang, Xianghe Peng, Cheng Huang, Yinbo Zhao, and Tao Fu
Phys. Rev. Lett. 123, 119601 (2019)

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Original Article

Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb

Guodong Li, Sergey I. Morozov, Qingjie Zhang, Qi An, Pengcheng Zhai, and G. Jeffrey Snyder
Phys. Rev. Lett. 119, 215503 (2017)

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Issue

Vol. 123, Iss. 11 — 13 September 2019

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