Abstract
Thin film flexoelectricity is attracting more attention because of its enhanced effect and potential application in electronic devices. Here we find that a mechanical bending induced flexoelectricity significantly modulates the electrical transport properties of the interfacial two-dimensional electron gas (2DEG) at the () heterostructure. Under variant bending states, both the carrier density and mobility of the 2DEG are changed according to the flexoelectric polarization direction, showing an electric field effect modulation. By measuring the flexoelectric response of LAO, it is found that the effective flexoelectricity in the LAO thin film is enhanced by 3 orders compared to its bulk. These results broaden the horizon of study on the flexoelectricity effect in the hetero-oxide interface and more research on the oxide interfacial flexoelectricity may be stimulated.
- Received 29 December 2018
- Revised 12 April 2019
- Corrected 19 March 2020
DOI:https://doi.org/10.1103/PhysRevLett.122.257601
© 2019 American Physical Society
Physics Subject Headings (PhySH)
Corrections
19 March 2020
Correction: The originally published Fig. 3(c) contained an error and has been replaced.
Synopsis
Flexing an Electron Gas
Published 26 June 2019
Bending a stack of metal oxide sheets can alter the electrical resistance of a 2D electron gas that resides within.
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