Formation of an r8-Dominant Si Material

S. Wong, B. Haberl, B. C. Johnson, A. Mujica, M. Guthrie, J. C. McCallum, J. S. Williams, and J. E. Bradby
Phys. Rev. Lett. 122, 105701 – Published 11 March 2019
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Abstract

The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of 4GPa that stabilizes the r8 phase.

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  • Received 1 November 2018

DOI:https://doi.org/10.1103/PhysRevLett.122.105701

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

S. Wong1,7, B. Haberl2, B. C. Johnson3, A. Mujica4, M. Guthrie5,6, J. C. McCallum3, J. S. Williams1, and J. E. Bradby1

  • 1Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia
  • 2Neutron Sciences Directorate, Oak Ridge National Laboratory, Neutron Scattering Division, Oak Ridge, Tennessee 37781, USA
  • 3School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
  • 4Departamento de Fisica, MALTA Consolider Team, Universidad de La Laguna, La Laguna 38206, Tenerife, Spain
  • 5European Spallation Source, Lund, SE-221 00, Sweden
  • 6School of Physics, University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
  • 7Department of Physics, School of Science, RMIT University, Victoria 3001, Australia

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Issue

Vol. 122, Iss. 10 — 15 March 2019

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