Landau Velocity for Collective Quantum Hall Breakdown in Bilayer Graphene

W. Yang, H. Graef, X. Lu, G. Zhang, T. Taniguchi, K. Watanabe, A. Bachtold, E. H. T. Teo, E. Baudin, E. Bocquillon, G. Fève, J-M. Berroir, D. Carpentier, M. O. Goerbig, and B. Plaçais
Phys. Rev. Lett. 121, 136804 – Published 25 September 2018
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Abstract

Breakdown of the quantum Hall effect (QHE) is commonly associated with an electric field approaching the inter-Landau-level (LL) Zener field, the ratio of the Landau gap and the cyclotron radius. Eluded in semiconducting heterostructures, in spite of extensive investigation, the intrinsic Zener limit is reported here using high-mobility bilayer graphene and high-frequency current noise. We show that collective excitations arising from electron-electron interactions are essential. Beyond a noiseless ballistic QHE regime a large super-Poissonian shot noise signals the breakdown via inter-LL scattering. The breakdown is ultimately limited by collective excitations in a regime where phonon and impurity scattering are quenched. The breakdown mechanism can be described by a Landau critical velocity as it bears strong similarities with the roton mechanism of superfluids. In addition, we show that breakdown is a precursor of an electric-field induced QHE-metal transition.

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  • Received 28 May 2018

DOI:https://doi.org/10.1103/PhysRevLett.121.136804

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

W. Yang1, H. Graef1,2,6, X. Lu3, G. Zhang3, T. Taniguchi4, K. Watanabe4, A. Bachtold5, E. H. T. Teo6, E. Baudin1, E. Bocquillon1, G. Fève1, J-M. Berroir1, D. Carpentier7, M. O. Goerbig8, and B. Plaçais1,*

  • 1Laboratoire Pierre Aigrain, Ecole Normale Supérieure, PSL University, Sorbonne Université, Université Paris Diderot, Sorbonne Paris Cité, CNRS, 24 rue Lhomond, 75005 Paris, France
  • 2CINTRA, UMI 3288, CNRS/NTU/Thales, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553 Singapore
  • 3Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 4Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
  • 5ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain
  • 6Nanyang Technological University, School of Electrical and Electronic Engineering, 50 Nanyang Ave, Singapore 639798, Singapore
  • 7University of Lyon, ENS de Lyon, University Claude Bernard, CNRS, Laboratoire de Physique, Lyon F-69342, France
  • 8Laboratoire de Physique des Solides, CNRS UMR 8502, University Paris-Sud, Université Paris-Saclay, F-91405 Orsay Cedex, France

  • *bernard.placais@lpa.ens.fr

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Issue

Vol. 121, Iss. 13 — 28 September 2018

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