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Exciton Diffusion and Halo Effects in Monolayer Semiconductors

Marvin Kulig, Jonas Zipfel, Philipp Nagler, Sofia Blanter, Christian Schüller, Tobias Korn, Nicola Paradiso, Mikhail M. Glazov, and Alexey Chernikov
Phys. Rev. Lett. 120, 207401 – Published 18 May 2018
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Abstract

We directly monitor exciton propagation in freestanding and SiO2-supported WS2 monolayers through spatially and time-resolved microphotoluminescence under ambient conditions. We find a highly nonlinear behavior with characteristic, qualitative changes in the spatial profiles of the exciton emission and an effective diffusion coefficient increasing from 0.3 to more than 30cm2/s, depending on the injected exciton density. Solving the diffusion equation while accounting for Auger recombination allows us to identify and quantitatively understand the main origin of the increase in the observed diffusion coefficient. At elevated excitation densities, the initial Gaussian distribution of the excitons evolves into long-lived halo shapes with μm-scale diameter, indicating additional memory effects in the exciton dynamics.

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  • Received 18 October 2017
  • Revised 12 January 2018

DOI:https://doi.org/10.1103/PhysRevLett.120.207401

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Marvin Kulig1, Jonas Zipfel1, Philipp Nagler1, Sofia Blanter1, Christian Schüller1, Tobias Korn1, Nicola Paradiso1, Mikhail M. Glazov2, and Alexey Chernikov1,*

  • 1Department of Physics, University of Regensburg, Regensburg D-93053, Germany
  • 2Ioffe Institute, Saint Petersburg, Russian Federation

  • *alexey.chernikov@ur.de

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Issue

Vol. 120, Iss. 20 — 18 May 2018

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