Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”

Wei Chen and Alfredo Pasquarello
Phys. Rev. Lett. 120, 039603 – Published 19 January 2018

Abstract

  • Figure
  • Received 21 September 2017

DOI:https://doi.org/10.1103/PhysRevLett.120.039603

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Wei Chen1 and Alfredo Pasquarello2

  • 1Institute of Condensed Matter and Nanoscicence (IMCN), Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium
  • 2Chaire de Simulation à l’Echelle Atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

Comments & Replies

Wu, Zhang, and Pantelides Reply:

Yu-Ning Wu, X.-G. Zhang, and Sokrates T. Pantelides
Phys. Rev. Lett. 120, 039604 (2018)

Wu, Zhang, and Pantelides Reply:

Y.-N. Wu, X.-G. Zhang, and S. T. Pantelides
Phys. Rev. Lett. 120, 039602 (2018)

Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”

Hui-Xiong Deng and Su-Huai Wei
Phys. Rev. Lett. 120, 039601 (2018)

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Original Article

Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors

Yu-Ning Wu, X.-G. Zhang, and Sokrates T. Pantelides
Phys. Rev. Lett. 119, 105501 (2017)

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Issue

Vol. 120, Iss. 3 — 19 January 2018

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