Phys. Rev. Lett. 120, 039602 (2018) - Wu, Zhang, and Pantelides Reply:

Wu, Zhang, and Pantelides Reply:

Y.-N. Wu, X.-G. Zhang, and S. T. Pantelides

Phys. Rev. Lett. 120, 039602 – Published 19 January 2018

Abstract

Received 10 October 2017

DOI:https://doi.org/10.1103/PhysRevLett.120.039602

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Dopants Impurities Point defects Vacancies

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Y.-N. Wu¹, X.-G. Zhang¹, and S. T. Pantelides²

¹Department of Physics and the Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
²Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA

Comments & Replies

Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”

Hui-Xiong Deng and Su-Huai Wei

Phys. Rev. Lett. 120, 039601 (2018)

Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”

Wei Chen and Alfredo Pasquarello

Phys. Rev. Lett. 120, 039603 (2018)

Wu, Zhang, and Pantelides Reply:

Yu-Ning Wu, X.-G. Zhang, and Sokrates T. Pantelides

Phys. Rev. Lett. 120, 039604 (2018)

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Original Article

Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors

Yu-Ning Wu, X.-G. Zhang, and Sokrates T. Pantelides

Phys. Rev. Lett. 119, 105501 (2017)

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Issue

Vol. 120, Iss. 3 — 19 January 2018

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