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Negative Spin Exchange in a Multielectron Quantum Dot

Frederico Martins, Filip K. Malinowski, Peter D. Nissen, Saeed Fallahi, Geoffrey C. Gardner, Michael J. Manfra, Charles M. Marcus, and Ferdinand Kuemmeth
Phys. Rev. Lett. 119, 227701 – Published 30 November 2017
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Abstract

We use a one-electron quantum dot as a spectroscopic probe to study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd and even occupation numbers. We observe that the multielectron ground-state transitions from spin-1/2-like to singletlike to tripletlike as we increase the detuning towards the next higher charge state. The sign reversal in the inferred exchange energy persists at zero magnetic field, and the exchange strength is tunable by gate voltages and in-plane magnetic fields. Complementing spin leakage spectroscopy data, the inspection of coherent multielectron spin exchange oscillations provides further evidence for the sign reversal and, inferentially, for the importance of nontrivial multielectron spin exchange correlations.

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  • Received 3 June 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.227701

© 2017 American Physical Society

Physics Subject Headings (PhySH)

  1. Physical Systems
Condensed Matter, Materials & Applied PhysicsQuantum Information, Science & Technology

Authors & Affiliations

Frederico Martins1, Filip K. Malinowski1, Peter D. Nissen1, Saeed Fallahi2, Geoffrey C. Gardner2, Michael J. Manfra2,3, Charles M. Marcus4, and Ferdinand Kuemmeth1

  • 1Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
  • 2Department of Physics and Astronomy, Station Q Purdue, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
  • 3School of Electrical and Computer Engineering and School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA
  • 4Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

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Issue

Vol. 119, Iss. 22 — 1 December 2017

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