Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures

Zuhuang Chen, Zhanghui Chen, Z. Q. Liu, M. E. Holtz, C. J. Li, X. Renshaw Wang, W. M. Lü, M. Motapothula, L. S. Fan, J. A. Turcaud, L. R. Dedon, C. Frederick, R. J. Xu, R. Gao, A. T. N’Diaye, E. Arenholz, J. A. Mundy, T. Venkatesan, D. A. Muller, L.-W. Wang, Jian Liu, and L. W. Martin
Phys. Rev. Lett. 119, 156801 – Published 11 October 2017
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Abstract

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.

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  • Received 13 February 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.156801

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zuhuang Chen1,2, Zhanghui Chen2, Z. Q. Liu3,*, M. E. Holtz4, C. J. Li5,6, X. Renshaw Wang7, W. M. Lü8, M. Motapothula6, L. S. Fan9, J. A. Turcaud1, L. R. Dedon1, C. Frederick10, R. J. Xu1, R. Gao1, A. T. N’Diaye11, E. Arenholz11, J. A. Mundy1,2, T. Venkatesan5,6, D. A. Muller4, L.-W. Wang2, Jian Liu1,†, and L. W. Martin1,2,‡

  • 1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3School of Materials Science and Engineering, Beihang University, Beijing 100191, China
  • 4School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
  • 5Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
  • 6NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore
  • 7School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 637371, Singapore
  • 8Condensed Matter Science and Technology Institute, School of Science, Harbin Institute of Technology, Harbin 150081, People’s Republic of China
  • 9Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 10Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
  • 11Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *zhiqi@buaa.edu.cn
  • jianliu@utk.edu
  • lwmartin@berkeley.edu

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Issue

Vol. 119, Iss. 15 — 13 October 2017

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