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Inducing and Manipulating Heteroelectronic States in a Single MoS2 Thin Flake

Q. H. Chen, J. M. Lu, L. Liang, O. Zheliuk, A. Ali, P. Sheng, and J. T. Ye
Phys. Rev. Lett. 119, 147002 – Published 5 October 2017
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Abstract

By dual gating a few-layer MoS2 flake, we induce spatially separated electronic states showing superconductivity and Shubnikov–de Haas (SdH) oscillations. While the highly confined superconductivity forms at the K/K valleys of the topmost layer, the SdH oscillations are contributed by the electrons residing in the Q/Q valleys of the rest of the bottom layers, which is confirmed by the extracted Landau level degeneracy of 3, electron effective mass of 0.6me, and carrier density of 5×1012cm2. Mimicking conventional heterostructures, the interaction between the heteroelectronic states can be electrically manipulated, which enables “bipolarlike” superconducting transistor operation. The off-on-off switching pattern can be continuously accessed at low temperatures by a field effect depletion of carriers with a negative back gate bias and the proximity effect between the top superconducting layer and the bottom metallic layers that quenches the superconductivity at a positive back gate bias.

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  • Received 10 April 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.147002

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Synopsis

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The Dichalcogenide Gets Two Faces

Published 5 October 2017

Electric fields applied on either side of a thin, semiconducting transition-metal dichalcogenide create a superconducting layer atop a metallic layer within the material.

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Authors & Affiliations

Q. H. Chen1,2, J. M. Lu1, L. Liang1, O. Zheliuk1, A. Ali1, P. Sheng2, and J. T. Ye1,*

  • 1Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG Groningen, Netherlands
  • 2Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China

  • *Corresponding author. j.ye@rug.nl

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Issue

Vol. 119, Iss. 14 — 6 October 2017

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