Unexpected Large Hole Effective Masses in SnSe Revealed by Angle-Resolved Photoemission Spectroscopy

Qiangsheng Lu, Minghui Wu, Di Wu, Cheng Chang, Yan-Ping Guo, Chun-Sheng Zhou, Wei Li, Xiao-Ming Ma, Gan Wang, Li-Dong Zhao, Li Huang, Chang Liu, and Jiaqing He
Phys. Rev. Lett. 119, 116401 – Published 13 September 2017
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Abstract

SnSe has emerged as an efficient thermoelectric material since a high value of the thermoelectric figure of merit (ZT) has been reported recently. Here we show with systematic angle resolved photoemission spectroscopy data that the low-lying electronic structures of undoped and hole-doped SnSe crystals exhibit noticeable temperature variation from 80 to 600 K. In particular, the hole effective masses for the two lowest lying valence band maxima are found to be very large and increase with decreasing temperature. Thermoelectric parameters derived from such hole-mass enhancement agree well with the transport values, indicating comprehensively a reduced impact of multivalley transport to the system’s thermoelectric performance.

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  • Received 31 March 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.116401

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Qiangsheng Lu1, Minghui Wu1, Di Wu1, Cheng Chang2, Yan-Ping Guo1, Chun-Sheng Zhou1, Wei Li1, Xiao-Ming Ma1, Gan Wang1, Li-Dong Zhao2, Li Huang1,*, Chang Liu1,†, and Jiaqing He1

  • 1Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China
  • 2School of Materials Science and Engineering, Beihang University, Beijing 100191, China

  • *huangl@sustc.edu.cn
  • liuc@sustc.edu.cn

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Issue

Vol. 119, Iss. 11 — 15 September 2017

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