Phys. Rev. Lett. 119, 079901 (2017) - Publisher's Note: Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates [Phys. Rev. Lett. 117, 086403 (2016)]

Publisher’s Note: Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates [Phys. Rev. Lett. 117, 086403 (2016)]

Philipp Leubner, Lukas Lunczer, Christoph Brüne, Hartmut Buhmann, and Laurens W. Molenkamp

Phys. Rev. Lett. 119, 079901 – Published 18 August 2017

Abstract

Received 7 August 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.079901

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Band gap Crystal growth Edge states Electrical conductivity Quantum spin Hall effect Semiconductors Strain Topological phases of matter

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Philipp Leubner, Lukas Lunczer, Christoph Brüne, Hartmut Buhmann, and Laurens W. Molenkamp

Article Text

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Original Article

Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates

Philipp Leubner, Lukas Lunczer, Christoph Brüne, Hartmut Buhmann, and Laurens W. Molenkamp

Phys. Rev. Lett. 117, 086403 (2016)

Issue

Vol. 119, Iss. 7 — 18 August 2017

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