Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds (A=Li, Na, K)

Bartomeu Monserrat, Joseph W. Bennett, Karin M. Rabe, and David Vanderbilt
Phys. Rev. Lett. 119, 036802 – Published 21 July 2017
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Abstract

We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

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  • Received 4 February 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.036802

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Bartomeu Monserrat1,2,*, Joseph W. Bennett1, Karin M. Rabe1, and David Vanderbilt1

  • 1Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
  • 2TCM Group, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

  • *bm418@cam.ac.uk

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Issue

Vol. 119, Iss. 3 — 21 July 2017

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