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Quantum Hall Spin Diode

J. P. Eisenstein, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett. 118, 186801 – Published 4 May 2017

Abstract

Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the N=1 Landau level at filling factors ν=5/2 and 7/2 is essentially complete, and, with the aid of an in-plane magnetic field component, that Landau level mixing at these filling factors is weak in the samples studied.

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  • Received 18 January 2017

DOI:https://doi.org/10.1103/PhysRevLett.118.186801

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. P. Eisenstein

  • Institute for Quantum Information and Matter, Department of Physics, California Institute of Technology, Pasadena, California 91125, USA

L. N. Pfeiffer and K. W. West

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

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Issue

Vol. 118, Iss. 18 — 5 May 2017

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