Triaxial-Stress-Induced Homogeneous Hysteresis-Free First-Order Phase Transformations with Stable Intermediate Phases

Valery I. Levitas, Hao Chen, and Liming Xiong
Phys. Rev. Lett. 118, 025701 – Published 11 January 2017
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Abstract

Starting with thermodynamic predictions and following with molecular dynamics simulations, special triaxial compression-tension states were found for which the stresses for the instability of the crystal lattice of silicon (Si) are the same for direct and reverse phase transformations (PTs) between semiconducting Si I and metallic Si II phases. This leads to unique homogeneous and hysteresis-free first-order PTs, for which each intermediate crystal lattice along the transformation path is in indifferent thermodynamic equilibrium and can be arrested and studied by fixing the strain in one direction. By approaching these stress states, a traditional two-phase system continuously transforms to homogenous intermediate phases. Zero hysteresis and homogeneous transformations are the optimal property for various PT applications, which drastically reduce damage and energy dissipation.

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  • Received 20 September 2016

DOI:https://doi.org/10.1103/PhysRevLett.118.025701

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Valery I. Levitas1,2, Hao Chen3, and Liming Xiong3

  • 1Iowa State University, Departments of Aerospace Engineering, Mechanical Engineering, and Material Science and Engineering, Ames, Iowa 50011, USA
  • 2Ames Laboratory, Division of Materials Science and Engineering, Ames, Iowa 50011, USA
  • 3Iowa State University, Department of Aerospace Engineering, Ames, Iowa 50011, USA

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Issue

Vol. 118, Iss. 2 — 13 January 2017

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