Negative Magnetoresistance in Viscous Flow of Two-Dimensional Electrons

P. S. Alekseev
Phys. Rev. Lett. 117, 166601 – Published 11 October 2016
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Abstract

At low temperatures, in very clean two-dimensional (2D) samples, the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature and size dependent. Our analysis demonstrates that this viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultrahigh-mobility GaAs quantum wells. We conclude that 2D electrons in those structures in moderate magnetic fields should be treated as a viscous fluid.

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  • Received 16 March 2016

DOI:https://doi.org/10.1103/PhysRevLett.117.166601

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

P. S. Alekseev*

  • Ioffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia

  • *Corresponding author. pavel.alekseev@mail.ioffe.ru

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Issue

Vol. 117, Iss. 16 — 14 October 2016

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