Electron Doping of the Parent Cuprate La2CuO4 without Cation Substitution

Haofei I. Wei, Carolina Adamo, Elizabeth A. Nowadnick, Edward B. Lochocki, Shouvik Chatterjee, Jacob P. Ruf, Malcolm R. Beasley, Darrell G. Schlom, and Kyle M. Shen
Phys. Rev. Lett. 117, 147002 – Published 28 September 2016
PDFHTMLExport Citation

Abstract

In the cuprates, carrier doping of the Mott insulating parent state is necessary to realize superconductivity as well as a number of other exotic states involving charge or spin density waves. Cation substitution is the primary method for doping carriers into these compounds, and is the only known method for electron doping in these materials. Here, we report electron doping without cation substitution in epitaxially stabilized thin films of La2CuO4 grown via molecular-beam epitaxy. We use angle-resolved photoemission spectroscopy to directly measure their electronic structure and conclusively determine that these compounds are electron doped with a carrier concentration of 0.09±0.02e/Cu. We propose that intrinsic defects, most likely oxygen vacancies, are the sources of doped electrons in these materials. Our results suggest a new approach to electron doping in the cuprates, one which could lead to a more detailed experimental understanding of their properties.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 27 April 2016

DOI:https://doi.org/10.1103/PhysRevLett.117.147002

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Haofei I. Wei1, Carolina Adamo2, Elizabeth A. Nowadnick3, Edward B. Lochocki1, Shouvik Chatterjee1, Jacob P. Ruf1, Malcolm R. Beasley2, Darrell G. Schlom4,5, and Kyle M. Shen1,5,*

  • 1Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
  • 2Department of Applied Physics, Stanford University, Palo Alto, California 94306, USA
  • 3School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
  • 4Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
  • 5Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA

  • *Author to whom correspondence should be addressed. kmshen@cornell.edu

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 117, Iss. 14 — 30 September 2016

Reuse & Permissions
Access Options
CHORUS

Article Available via CHORUS

Download Accepted Manuscript
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×