Single-Layer Limit of Metallic Indium Overlayers on Si(111)

Jae Whan Park and Myung Ho Kang
Phys. Rev. Lett. 117, 116102 – Published 8 September 2016
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Abstract

Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one 7×3 phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other 7×7 phase with 1.43 ML, which indeed agree with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that the ultimate 2D limit of In overlayers may have been achieved in previous studies of double-layer In phases.

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  • Received 6 April 2016

DOI:https://doi.org/10.1103/PhysRevLett.117.116102

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Interdisciplinary PhysicsCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Jae Whan Park and Myung Ho Kang*

  • Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea

  • *kang@postech.ac.kr

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Issue

Vol. 117, Iss. 11 — 9 September 2016

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