Publisher’s Note: Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier [Phys. Rev. Lett. 116, 197602 (2016)]

Xiaohui Liu, J. D. Burton, and Evgeny Y. Tsymbal
Phys. Rev. Lett. 116, 209902 – Published 20 May 2016

Abstract

  • Received 13 May 2016

DOI:https://doi.org/10.1103/PhysRevLett.116.209902

© 2016 American Physical Society

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Original Article

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

Xiaohui Liu, J. D. Burton, and Evgeny Y. Tsymbal
Phys. Rev. Lett. 116, 197602 (2016)
Issue

Vol. 116, Iss. 20 — 20 May 2016

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