Phys. Rev. Lett. 116, 209901 (2016) - Erratum: Random Field Driven Spatial Complexity at the Mott Transition in ${\mathrm{VO}}_{2}$ [Phys. Rev. Lett. 116, 036401 (2016)]

Erratum: Random Field Driven Spatial Complexity at the Mott Transition in ${VO}_{2}$ [Phys. Rev. Lett. 116, 036401 (2016)]

Shuo Liu, B. Phillabaum, E. W. Carlson, K. A. Dahmen, N. S. Vidhyadhiraja, M. M. Qazilbash, and D. N. Basov

Phys. Rev. Lett. 116, 209901 – Published 19 May 2016

Abstract

Received 3 May 2016

DOI:https://doi.org/10.1103/PhysRevLett.116.209901

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Metal-insulator transition

Random field Ising model

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shuo Liu, B. Phillabaum, E. W. Carlson, K. A. Dahmen, N. S. Vidhyadhiraja, M. M. Qazilbash, and D. N. Basov

Article Text

Click to Expand

Original Article

Random Field Driven Spatial Complexity at the Mott Transition in ${VO}_{2}$

Shuo Liu, B. Phillabaum, E. W. Carlson, K. A. Dahmen, N. S. Vidhyadhiraja, M. M. Qazilbash, and D. N. Basov

Phys. Rev. Lett. 116, 036401 (2016)

Issue

Vol. 116, Iss. 20 — 20 May 2016

Reuse & Permissions

Author publication services for translation and copyediting assistance advertisement

Sign up to receive regular email alerts from Physical Review Letters