High-Fidelity Resonator-Induced Phase Gate with Single-Mode Squeezing

Shruti Puri and Alexandre Blais
Phys. Rev. Lett. 116, 180501 – Published 2 May 2016
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Abstract

We propose to increase the fidelity of two-qubit resonator-induced phase gates in circuit QED by the use of narrow-band single-mode squeezing. We show that there exists an optimal squeezing angle and strength that erases qubit “which-path” information leaking out of the cavity and thereby minimizes qubit dephasing during these gates. Our analytical results for the gate fidelity are in excellent agreement with numerical simulations of a cascaded master equation that takes into account the dynamics of the source of squeezed radiation. With realistic parameters, we find that it is possible to realize a controlled-phase gate with a gate time of 200 ns and average infidelity of 105.

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  • Received 20 January 2016

DOI:https://doi.org/10.1103/PhysRevLett.116.180501

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & TechnologyGeneral Physics

Authors & Affiliations

Shruti Puri1 and Alexandre Blais1,2

  • 1Départment de Physique, Université de Sherbrooke, Sherbrooke, Québec, Canada J1K 2R1
  • 2Canadian Institute for Advanced Research, Toronto, Canada

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Issue

Vol. 116, Iss. 18 — 6 May 2016

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