Microwave-Induced Resistance Oscillations as a Classical Memory Effect

Y. M. Beltukov and M. I. Dyakonov
Phys. Rev. Lett. 116, 176801 – Published 27 April 2016

Abstract

By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by recollisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magnetotransport in the presence of a microwave field, taking into account memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.

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  • Received 2 February 2016

DOI:https://doi.org/10.1103/PhysRevLett.116.176801

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Y. M. Beltukov1,2 and M. I. Dyakonov2

  • 1Ioffe Institute, 194021 St. Petersburg, Russia
  • 2Laboratoire Charles Coulomb, Université Montpellier, CNRS, 34095 Montpellier, France

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Issue

Vol. 116, Iss. 17 — 29 April 2016

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