Abstract
By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by recollisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magnetotransport in the presence of a microwave field, taking into account memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.
- Received 2 February 2016
DOI:https://doi.org/10.1103/PhysRevLett.116.176801
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