Probing Quantum Capacitance in a 3D Topological Insulator

D. A. Kozlov, D. Bauer, J. Ziegler, R. Fischer, M. L. Savchenko, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, and D. Weiss
Phys. Rev. Lett. 116, 166802 – Published 22 April 2016
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Abstract

We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magnetocapacitance oscillations probe—in contrast to magnetotransport—primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.

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  • Received 3 November 2015

DOI:https://doi.org/10.1103/PhysRevLett.116.166802

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

D. A. Kozlov1,2,3, D. Bauer3, J. Ziegler3, R. Fischer3, M. L. Savchenko1,2, Z. D. Kvon1,2, N. N. Mikhailov1, S. A. Dvoretsky1, and D. Weiss3

  • 1A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia
  • 2Novosibirsk State University, Novosibirsk 630090, Russia
  • 3Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany

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Issue

Vol. 116, Iss. 16 — 22 April 2016

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