Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene

S. Dushenko, H. Ago, K. Kawahara, T. Tsuda, S. Kuwabata, T. Takenobu, T. Shinjo, Y. Ando, and M. Shiraishi
Phys. Rev. Lett. 116, 166102 – Published 21 April 2016
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Abstract

The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.

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  • Received 4 July 2015

DOI:https://doi.org/10.1103/PhysRevLett.116.166102

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

S. Dushenko1,2, H. Ago3, K. Kawahara3, T. Tsuda4, S. Kuwabata4, T. Takenobu5, T. Shinjo2, Y. Ando2, and M. Shiraishi2

  • 1Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan
  • 2Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
  • 3Institute for Material Chemistry and Engineering, Kyushu University, Fukuoka 816-8508, Japan
  • 4Graduate School of Engineering, Osaka University, Suita 565-0871, Japan
  • 5School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan

  • Corresponding author. mshiraishi@kuee.kyoto-u.ac.jp

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Issue

Vol. 116, Iss. 16 — 22 April 2016

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