Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility

Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc
Phys. Rev. Lett. 116, 086601 – Published 23 February 2016

Abstract

We study the magnetotransport properties of high-mobility holes in monolayer and bilayer WSe2, which display well defined Shubnikov–de Haas (SdH) oscillations, and quantum Hall states in high magnetic fields. In both mono- and bilayer WSe2, the SdH oscillations and the quantum Hall states occur predominantly at even filling factors, evincing a twofold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe2 reveals the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of 0.45m0 for both mono- and bilayer WSe2.

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  • Received 23 November 2015

DOI:https://doi.org/10.1103/PhysRevLett.116.086601

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Babak Fallahazad1, Hema C. P. Movva1, Kyounghwan Kim1, Stefano Larentis1, Takashi Taniguchi2, Kenji Watanabe2, Sanjay K. Banerjee1, and Emanuel Tutuc1,*

  • 1Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
  • 2National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan

  • *etutuc@mer.utexas.edu

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Vol. 116, Iss. 8 — 26 February 2016

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