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Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

Yuhan Zhang, Jingsi Qiao, Si Gao, Fengrui Hu, Daowei He, Bing Wu, Ziyi Yang, Bingchen Xu, Yun Li, Yi Shi, Wei Ji, Peng Wang, Xiaoyong Wang, Min Xiao, Hangxun Xu, Jian-Bin Xu, and Xinran Wang
Phys. Rev. Lett. 116, 016602 – Published 5 January 2016
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Abstract

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only 3nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

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  • Received 20 August 2015

DOI:https://doi.org/10.1103/PhysRevLett.116.016602

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

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Precise Layering of Organic Semiconductors

Published 5 January 2016

Researchers have fabricated high-quality organic semiconductors only a few molecular layers thick, revealing how the crystal structure affects the electronic properties.

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Authors & Affiliations

Yuhan Zhang1, Jingsi Qiao2, Si Gao3, Fengrui Hu4, Daowei He1, Bing Wu1, Ziyi Yang1, Bingchen Xu1, Yun Li1, Yi Shi1,*, Wei Ji2,5,†, Peng Wang3, Xiaoyong Wang4, Min Xiao4,6, Hangxun Xu7, Jian-Bin Xu8,1,‡, and Xinran Wang1,§

  • 1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • 2Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
  • 3College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
  • 4School of Physics, Nanjing University, Nanjing 210093, China
  • 5Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 6Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 7CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei 230026, China
  • 8Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China

  • *Corresponding authors. yshi@nju.edu.cn
  • wji@ruc.edu.cn
  • jbxu@ee.cuhk.edu.hk
  • §xrwang@nju.edu.cn

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Issue

Vol. 116, Iss. 1 — 8 January 2016

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