Abstract
To control the spin state of an individual atom is an ultimate goal for spintronics. A single atom magnet, which may lead to a supercapacity memory device if realized, requires the high-spin state of an isolated individual atom. Here, we demonstrate the realization of well isolated transition metal (TM) atoms fixed at atomic defects sparsely dispersed in graphene. Core-level electron spectroscopy clearly reveals the high-spin state of the individual TM atoms at the divacancy or edge of the graphene layer. We also show for the first time that the spin state of single TM atoms systematically varies with the coordination of neighboring nitrogen or oxygen atoms. These structures can be thus regarded as the smallest components of spintronic devices with controlled magnetic behavior.
- Received 7 July 2015
DOI:https://doi.org/10.1103/PhysRevLett.115.206803
© 2015 American Physical Society
Synopsis
Measuring Spin One Atom at a Time
Published 12 November 2015
Electron microscopy experiments have measured the spin state of individual metal atoms on a graphene layer, characterizing their potential for information storage applications.
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