Abstract
We show electric field control of the spin accumulation at the interface of the oxide semiconductor with spin injection contacts at room temperature. The in-plane spin lifetime , as well as the ratio of the out-of-plane to in-plane spin lifetime , is manipulated by the built-in electric field at the semiconductor surface, without any additional gate contact. The origin of this manipulation is attributed to Rashba spin orbit fields (SOFs) at the surface and shown to be consistent with theoretical model calculations based on SOF spin flip scattering. Additionally, the junction can be set in a high or low resistance state, leading to a nonvolatile control of , consistent with the manipulation of the Rashba SOF strength. Such room temperature electric field control over the spin state is essential for developing energy-efficient spintronic devices and shows promise for complex oxide based (spin) electronics.
- Received 21 May 2015
DOI:https://doi.org/10.1103/PhysRevLett.115.136601
© 2015 American Physical Society