• Open Access

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

Hangwen Guo, Shuai Dong, Philip D. Rack, John D. Budai, Christianne Beekman, Zheng Gai, Wolter Siemons, C. M. Gonzalez, R. Timilsina, Anthony T. Wong, Andreas Herklotz, Paul C. Snijders, Elbio Dagotto, and Thomas Z. Ward
Phys. Rev. Lett. 114, 256801 – Published 25 June 2015
PDFHTMLExport Citation

Abstract

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100°C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials’ functional properties.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 9 February 2015

DOI:https://doi.org/10.1103/PhysRevLett.114.256801

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Authors & Affiliations

Hangwen Guo1,2,3, Shuai Dong1,2,4, Philip D. Rack5,6, John D. Budai1, Christianne Beekman1, Zheng Gai5, Wolter Siemons1, C. M. Gonzalez6, R. Timilsina6, Anthony T. Wong1,6, Andreas Herklotz1, Paul C. Snijders1,2, Elbio Dagotto1,2, and Thomas Z. Ward1,*

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 2Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
  • 3Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA
  • 4Department of Physics, Southeast University, Nanjing, 211189, China
  • 5Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 6Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA

  • *To whom correspondence should be addressed. wardtz@ornl.gov

Article Text

Click to Expand

Supplemental Material

Click to Expand

References

Click to Expand
Issue

Vol. 114, Iss. 25 — 26 June 2015

Reuse & Permissions
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 3.0 License. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

×

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×