Ultrafast Atomic Diffusion Inducing a Reversible (23×23)R30°(3×3)R30° Transition on Sn/Si(111)B

W. Srour, Daniel G. Trabada, J. I. Martínez, F. Flores, J. Ortega, M. Abuín, Y. Fagot-Revurat, B. Kierren, A. Taleb-Ibrahimi, D. Malterre, and A. Tejeda
Phys. Rev. Lett. 114, 196101 – Published 13 May 2015
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Abstract

Dynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250°C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground states.

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  • Received 5 September 2014

DOI:https://doi.org/10.1103/PhysRevLett.114.196101

© 2015 American Physical Society

Authors & Affiliations

W. Srour1,2, Daniel G. Trabada3, J. I. Martínez3, F. Flores3, J. Ortega3, M. Abuín4, Y. Fagot-Revurat1, B. Kierren1, A. Taleb-Ibrahimi5, D. Malterre1, and A. Tejeda2,6,*

  • 1Institut Jean Lamour, CNRS-Université de Lorraine, 54506 Vandoeuvre les Nancy, France
  • 2Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette, France
  • 3Dto. de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
  • 4Dto. de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain
  • 5UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France
  • 6Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR 8502, F-91405 Orsay, France

  • *Corresponding author. antonio.tejeda@u-psud.fr

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Issue

Vol. 114, Iss. 19 — 15 May 2015

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