Submillisecond Hyperpolarization of Nuclear Spins in Silicon

Felix Hoehne, Lukas Dreher, David P. Franke, Martin Stutzmann, Leonid S. Vlasenko, Kohei M. Itoh, and Martin S. Brandt
Phys. Rev. Lett. 114, 117602 – Published 17 March 2015
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Abstract

In this Letter, we devise a fast and effective nuclear spin hyperpolarization scheme, which is, in principle, magnetic field independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100μs in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme is based on a spin-dependent recombination process via weakly coupled spin pairs, for which the recombination time constant strongly depends on the relative orientation of the two spins. We further use this scheme to measure the nuclear spin relaxation time and find a value of 100ms under illumination, in good agreement with the value calculated for nuclear spin flips induced by repeated ionization and deionization processes.

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  • Received 15 August 2013

DOI:https://doi.org/10.1103/PhysRevLett.114.117602

© 2015 American Physical Society

Authors & Affiliations

Felix Hoehne1,*, Lukas Dreher1, David P. Franke1, Martin Stutzmann1, Leonid S. Vlasenko2, Kohei M. Itoh3, and Martin S. Brandt1

  • 1Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
  • 2A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 3School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohuku-ku, Yokohama 223-8522, Japan

  • *Corresponding author. hoehne@wsi.tum.de

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Issue

Vol. 114, Iss. 11 — 20 March 2015

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