Multiterminal Conductance of a Floquet Topological Insulator

L. E. F. Foa Torres, P. M. Perez-Piskunow, C. A. Balseiro, and Gonzalo Usaj
Phys. Rev. Lett. 113, 266801 – Published 22 December 2014
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Abstract

We report on simulations of the dc conductance and quantum Hall response of a Floquet topological insulator using Floquet scattering theory. Our results reveal that laser-induced edge states lead to quantum Hall plateaus once imperfect matching with the nonilluminated leads is lessened. The magnitude of the Hall plateaus, however, is not directly related to the number and chirality of all the edge states at a given energy, as usual. Instead, the plateaus are dominated by those edge states adding to the time-averaged density of states. Therefore, the dc quantum Hall conductance of a Floquet topological insulator is not directly linked to topological invariants of the full Floquet bands.

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  • Received 28 August 2014

DOI:https://doi.org/10.1103/PhysRevLett.113.266801

© 2014 American Physical Society

Authors & Affiliations

L. E. F. Foa Torres1,*, P. M. Perez-Piskunow1, C. A. Balseiro2,3, and Gonzalo Usaj2,3

  • 1Instituto de Física Enrique Gaviola (CONICET) and FaMAF, Universidad Nacional de Córdoba, 5000 Córdoba, Argentina
  • 2Centro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de Energía Atómica, 8400 Bariloche, Argentina
  • 3Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina

  • *lfoa@famaf.unc.edu.ar

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Issue

Vol. 113, Iss. 26 — 31 December 2014

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