Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon

Hui Zhang, Fangfei Ming, Hyun-Jung Kim, Hongbin Zhu, Qiang Zhang, Hanno H. Weitering, Xudong Xiao, Changgan Zeng, Jun-Hyung Cho, and Zhenyu Zhang
Phys. Rev. Lett. 113, 196802 – Published 6 November 2014
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Abstract

Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize electronically phase-separated ground states where the insulating 8×2 and metallic 4×1 phases coexist. Furthermore, the areal ratio of the two phases in the phase-separated states can be tuned reversibly by electric field or charge doping, and such tunabilities can be quantitatively captured by first principles-based modeling and simulations. The present results extend the realm of electronic phase separation from strongly correlated d-electron materials typically in bulk form to weakly interacting sp-electron systems in reduced dimensionality.

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  • Received 8 June 2014

DOI:https://doi.org/10.1103/PhysRevLett.113.196802

© 2014 American Physical Society

Authors & Affiliations

Hui Zhang1, Fangfei Ming2, Hyun-Jung Kim3, Hongbin Zhu1, Qiang Zhang1, Hanno H. Weitering4,5, Xudong Xiao2,6, Changgan Zeng1,7,8,*, Jun-Hyung Cho3,†, and Zhenyu Zhang7,8

  • 1Hefei National Laboratory for Physical Sciences at the Microscale (HFNL) and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 2Department of Physics, The Chinese University of Hong Kong, Shatin, New Territory, Hong Kong, China
  • 3Department of Physics, Hanyang University, 17 Haengdang-Dong, SeongDong-Ku, Seoul 133-791, Korea
  • 4Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
  • 5Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 6Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen 518055, China
  • 7International Center for Quantum Design of Functional Materials (ICQD), HFNL, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 8Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China

  • *cgzeng@ustc.edu.cn
  • chojh@hanyang.ac.kr

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Issue

Vol. 113, Iss. 19 — 7 November 2014

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