Theory of Oxygen-Boron Vacancy Defect in Cubic Boron Nitride: A Diamond NV Isoelectronic Center

Tesfaye A. Abtew, Weiwei Gao, Xiang Gao, Y. Y. Sun, S. B. Zhang, and Peihong Zhang
Phys. Rev. Lett. 113, 136401 – Published 23 September 2014
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Abstract

A color center in c-BN which is isoelectronic to diamond NV is predicted based on first-principles electronic structure calculations using the Heyd-Scuseria-Ernzerhof hybrid functional. The defect consists of a substitutional oxygen and an adjacent boron vacancy (ONVB). We find that the ONVB center is optically accessible with a zero-phonon line of about 1.6 eV. The ONVB center also shares much of the characteristics of the GC-2 center often observed in c-BN. A prominent vibronic coupling peak is predicted to be around 55 meV, which is in excellent agreement with the characteristic phonon frequency (56 meV) observed in the luminescence spectra of the GC-2 center.

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  • Received 5 May 2014

DOI:https://doi.org/10.1103/PhysRevLett.113.136401

© 2014 American Physical Society

Authors & Affiliations

Tesfaye A. Abtew1, Weiwei Gao1, Xiang Gao2, Y. Y. Sun3, S. B. Zhang3, and Peihong Zhang1,2

  • 1Department of Physics, University at Buffalo, State University of New York, Buffalo, New York 14260, USA
  • 2Beijing Computational Science Research Center, Beijing 100084, China
  • 3Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

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Issue

Vol. 113, Iss. 13 — 26 September 2014

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