Thermal Transport Along the Dislocation Line in Silicon Carbide

Yuxiang Ni, Shiyun Xiong, Sebastian Volz, and Traian Dumitricǎ
Phys. Rev. Lett. 113, 124301 – Published 18 September 2014
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Abstract

We elucidate thermal conductivity along the screw dislocation line, which represents a transport direction inaccessible to classical theories. By using equilibrium molecular dynamics simulations, we uncover a Burgers vector dependent thermal conductivity reduction in silicon carbide. The effect is uncorrelated with the classical modeling and originates in the highly deformed core region, which represents a significant source of anharmonic phonon-phonon scattering. High strain reduces the phonon relaxation time, especially in the longitudinal acoustic branches, and creates an effective internal thermal resistance around the dislocation axis. Our results have implications for designing materials useful for high-temperature electronics and thermoelectric applications.

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  • Received 12 June 2014

DOI:https://doi.org/10.1103/PhysRevLett.113.124301

© 2014 American Physical Society

Authors & Affiliations

Yuxiang Ni1, Shiyun Xiong2, Sebastian Volz2, and Traian Dumitricǎ1,*

  • 1Department of Mechanical Engineering, University of Minnesota, 111 Church Street SE, Minneapolis, Minnesota 55455, USA
  • 2Laboratoire d’Energétique Moléculaire et Macroscopique, CNRS UPR 288, Ecole Centrale Paris, Grande Voie des Vignes, 92295 Châtenay-Malabry, France

  • *Corresponding author. dtraian@umn.edu

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Issue

Vol. 113, Iss. 12 — 19 September 2014

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