Artificial Topological Superconductor by the Proximity Effect

Jin-Peng Xu, Canhua Liu, Mei-Xiao Wang, Jianfeng Ge, Zhi-Long Liu, Xiaojun Yang, Yan Chen, Ying Liu, Zhu-An Xu, Chun-Lei Gao, Dong Qian, Fu-Chun Zhang, and Jin-Feng Jia
Phys. Rev. Lett. 112, 217001 – Published 30 May 2014

Abstract

Topological superconductors (TSCs), featuring fully gapped bulk and gapless surface states as well as Majorana fermions, have potential applications in fault-tolerant topological quantum computing. Because TSCs are very rare in nature, an alternative way to study the TSC is to artificially introduce superconductivity into the surface states of a topological insulator through the proximity effect [X. L. Qi, T. L. Hughse, S. Raghu, and S. C. Zhang, Phys. Rev. Lett. 102, 187001 (2009); L. Fu and C. L. Kane, Phys. Rev. Lett. 100, 096407 (2008); J. Alicea, Rep. Prog. Phys. 75, 076501 (2012); C. W. J. Beenakker, Annu. Rev. Condens. Matter Phys. 4, 113 (2013)]. Here we report the experimental realization of the proximity effect–induced TSC in Bi2Te3 thin films grown on a NbSe2 substrate, as demonstrated by the density of states probed using scanning tunneling spectroscopy. We observed Abrikosov vortices and Andreev lower energy bound states on the surface of the topological insulator, with the superconducting coherence length depending on the film thickness and the magnetic field. These results also indicate that the topological surface states of Bi2Te3 thin films are superconducting and, thus, that the Bi2Te3/NbSe2 is an artificial TSC. The feasibility of fabricating a TSC with an individual Majorana fermion bound to a superconducting vortex for topological quantum computing is discussed.

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  • Received 25 February 2014

DOI:https://doi.org/10.1103/PhysRevLett.112.217001

© 2014 American Physical Society

Authors & Affiliations

Jin-Peng Xu1, Canhua Liu1, Mei-Xiao Wang1, Jianfeng Ge1, Zhi-Long Liu1, Xiaojun Yang2, Yan Chen3, Ying Liu1,4, Zhu-An Xu2, Chun-Lei Gao1, Dong Qian1, Fu-Chun Zhang2,5, and Jin-Feng Jia1,*

  • 1Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
  • 2State Key Laboratory of Silicon Materials and Department of Physics, Zhejiang University, Hangzhou 310027, China
  • 3Department of Physics, Fudan University, Shanghai 200433, China
  • 4Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 5Department of Physics, Hong Kong University, Hong Kong, China

  • *Corresponding author. jfjia@sjtu.edu.cn

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Vol. 112, Iss. 21 — 30 May 2014

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