Comment on “Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach”

A Comment on the Letter by H. J. Xiang, B. Huang, E. Kan, S.-H. Wei, and X. G. Gong, [Phys. Rev. Lett. 110, 118702 (2013)]. The authors of the Letter offer a Reply.

Figure 1

$\text{Energy}/\text{atom}$ as function of volume/atom for the structures in Ref. [4], together with ${\mathrm{Si}}_{20}\text{−}\mathrm{T}$.