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Electrically Injected Photon-Pair Source at Room Temperature

Fabien Boitier, Adeline Orieux, Claire Autebert, Aristide Lemaître, Elisabeth Galopin, Christophe Manquest, Carlo Sirtori, Ivan Favero, Giuseppe Leo, and Sara Ducci
Phys. Rev. Lett. 112, 183901 – Published 7 May 2014
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Abstract

One of the main challenges for future quantum information technologies is the miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of nonclassical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelengths. The device is based on type-II intracavity spontaneous parametric down-conversion in an AlGaAs laser diode and generates pairs at 1.57μm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7×1011pairs/injected electron. The capability of our platform to support the generation, manipulation, and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.

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  • Received 20 December 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.183901

© 2014 American Physical Society

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Published 7 May 2014

Researchers have fabricated an electrically powered semiconductor device that creates photon pairs.

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Authors & Affiliations

Fabien Boitier1, Adeline Orieux1,*, Claire Autebert1, Aristide Lemaître2, Elisabeth Galopin2, Christophe Manquest1, Carlo Sirtori1, Ivan Favero1, Giuseppe Leo1, and Sara Ducci1,†

  • 1Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS-UMR 7162, Case courrier 7021, 75205 Paris Cedex 13, France
  • 2Laboratoire de Photonique et Nanostructures, CNRS-UPR20, Route de Nozay, 91460 Marcoussis, France

  • *Present address: Dipartimento di Fisica, Sapienza Università di Roma, Piazzale Aldo Moro, 5, I-00185 Roma, Italy.
  • sara.ducci@univ-paris-diderot.fr

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Issue

Vol. 112, Iss. 18 — 9 May 2014

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