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Magnetic-Field-Induced Ferroelectric Polarization Reversal in the Multiferroic Ge1xMnxTe Semiconductor

H. Przybylińska, G. Springholz, R. T. Lechner, M. Hassan, M. Wegscheider, W. Jantsch, and G. Bauer
Phys. Rev. Lett. 112, 047202 – Published 29 January 2014
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Abstract

Ge1xMnxTe is shown to be a multiferroic semiconductor, exhibiting both ferromagnetic and ferroelectric properties. By ferromagnetic resonance we demonstrate that both types of order are coupled to each other. As a result, magnetic-field-induced ferroelectric polarization reversal is achieved. Switching of the spontaneous electric dipole moment is monitored by changes in the magnetocrystalline anisotropy. This also reveals that the ferroelectric polarization reversal is accompanied by a reorientation of the hard and easy magnetization axes. By tuning the GeMnTe composition, the interplay between ferromagnetism and ferroelectricity can be controlled.

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  • Received 25 March 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.047202

© 2014 American Physical Society

Authors & Affiliations

H. Przybylińska1,*, G. Springholz2,†, R. T. Lechner2,3, M. Hassan2,4, M. Wegscheider2, W. Jantsch2, and G. Bauer2

  • 1Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • 2Institut für Halbleiter-und Festkörperphysik, Johannes Kepler Universität, A-4040 Linz, Austria
  • 3Institut für Physik, Montanuniversität Leoben, A-8700 Leoben, Austria
  • 4Department of Physics, University of the Punjab, Lahore-54590, Pakistan

  • *Corresponding author. przyby@ifpan.edu.pl
  • Corresponding author. gunther.springholz@jku.at

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Issue

Vol. 112, Iss. 4 — 31 January 2014

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