Tip-Enhanced Raman Investigation of Extremely Localized Semiconductor-to-Metal Transition of a Carbon Nanotube

Yoshito Okuno, Yuika Saito, Satoshi Kawata, and Prabhat Verma
Phys. Rev. Lett. 111, 216101 – Published 19 November 2013

Abstract

The electronic properties of single walled carbon nanotubes (SWNTs) can change with a slight deformation, such as the one caused by the pressure of one SWNT crossing over the other in an “X” shape. The effect, however, is extremely localized. We present a tip-enhanced Raman investigation of the extremely localized semiconductor-to-metal transition of SWNTs in such a situation, where we can see how the Fano interaction, which is a Raman signature of metallic behavior, grows towards the junction and is localized within a few nanometers of its vicinity. After exploring the deconvoluted components of the G-band Raman mode, we were able to reveal the change in electronic properties of a SWNT at extremely high spatial resolution along its length.

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  • Received 25 April 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.216101

© 2013 American Physical Society

Authors & Affiliations

Yoshito Okuno1, Yuika Saito1, Satoshi Kawata1,2,3, and Prabhat Verma1,2

  • 1Department of Applied Physics, Osaka University, Osaka 565-0871, Japan
  • 2Photonics Center, Osaka University, Osaka 565-0871, Japan
  • 3RIKEN, Wako, Saitama 351-0198, Japan

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Issue

Vol. 111, Iss. 21 — 22 November 2013

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